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MOS Capacitor01:25

MOS Capacitor

1.7K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.7K
Energy Stored in a Capacitor01:12

Energy Stored in a Capacitor

4.9K
When an archer pulls the string in a bow, he saves the work done in the form of elastic potential energy. When he releases the string, the potential energy is released as kinetic energy of the arrow. A capacitor works on the same principle in which the work done is saved as electric potential energy. The potential energy (UC) could be calculated by measuring the work done (W) to charge the capacitor.
4.9K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

906
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
906
Energy Stored in Capacitors01:10

Energy Stored in Capacitors

1.2K
A parallel plate capacitor, when connected to a battery, develops a potential difference across its plates. This potential difference is key to the operation of the capacitor, as it determines how much electrical energy the capacitor can store.
By integrating the equation that relates voltage and current in a capacitor, one can derive an equation for the voltage across the capacitor at any given time. This equation is crucial in understanding and predicting the behavior of capacitors in...
1.2K
Superconductor01:24

Superconductor

1.9K
A substance that reaches superconductivity, a state in which magnetic fields cannot penetrate, and there is no electrical resistance, is referred to as a superconductor. In 1911, Heike Kamerlingh Onnes of Leiden University, a Dutch physicist, observed a relation between the temperature and the resistance of the element mercury. The mercury sample was then cooled in liquid helium to study the linear dependence of resistance on temperature. It was observed that, as the temperature decreased, the...
1.9K
Energy Stored in Inductors01:16

Energy Stored in Inductors

1.0K
An inductor is ingeniously crafted to accumulate energy within its magnetic field. This field is a direct result of the current that meanders through its coiled structure. When this current maintains a steady state, there is no detectable voltage across the inductor, prompting it to mimic the behavior of a short circuit when faced with direct current.
In terms of gauging the energy stored within an inductor, it is equivalent to the integral of the power delivered at every individual moment, all...
1.0K

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Related Experiment Video

Updated: Mar 3, 2026

Gradient Echo Quantum Memory in Warm Atomic Vapor
10:00

Gradient Echo Quantum Memory in Warm Atomic Vapor

Published on: November 11, 2013

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Superconducting Integrated On-Demand Quantum Memory with Microwave Pulse Preservation.

Aleksei R Matanin1,2, Nikita S Smirnov1,2, Anton I Ivanov1

  • 1Bauman Moscow State Technical University, Shukhov Labs, Quantum Park, Moscow 105005, Russia.

Physical Review Letters
|March 1, 2026
PubMed
Summary

This study introduces a novel integrated superconducting quantum memory for quantum error correction. The new design achieves a 1.51 μs cycle time and 57.5% storage fidelity, paving the way for scalable quantum computing.

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Area of Science:

  • Quantum Information Science
  • Superconducting Circuits
  • Quantum Computing

Background:

  • Microwave quantum memory is crucial for quantum radars and quantum error correction.
  • Superconducting resonators offer efficient storage but face on-chip loss challenges.
  • Overcoming design and material limitations is key for integrated quantum memory.

Purpose of the Study:

  • To present a novel architecture for integrated superconducting quantum memory.
  • To demonstrate high-efficiency storage and cycling using a dynamically controlled RF-SQUID coupler.
  • To assess the device's performance for quantum state storage.

Main Methods:

  • Developed an integrated superconducting quantum memory architecture.
  • Employed a dynamically controlled Radio Frequency-Superconducting Quantum Interference Device (RF-SQUID) coupling element.
  • Tested storage fidelity and pulse shape preservation at single-photon level excitations.

Main Results:

  • Achieved a memory cycle time of 1.51 μs.
  • Demonstrated 57.5(4)% storage fidelity with pulse shape preservation.
  • Identified impedance matching and material imperfections as primary limitations.

Conclusions:

  • The proposed architecture shows potential for on-chip qubit and memory integration.
  • The device operates linearly for low photon populations, compatible with quantum state storage.
  • Further improvements in impedance matching and materials can lead to near-unity storage fidelity.