Related Experiment Video
Updated: Mar 3, 2026

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
Published on: March 9, 2019
Bias-Voltage-Driven Single-Molecule Switches with Positive and Negative Responses
Yunpeng Li1, Yanfeng Shen1, Rui Wang1
1Key Laboratory for Advanced Materials, Feringa Nobel Prize Scientist Joint Research Center, Frontiers Science Center for Materiobiology and Dynamic Chemistry, Institute of Fine Chemicals, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai 200237, P. R. China.
Researchers developed benzothiadiazole (BTZ)-centered molecular wires that act as all-electrically driven molecular switches. These switches exhibit distinct positive or negative responses, crucial for advanced molecular electronics.
Area of Science:
- Molecular electronics
- Organic electronics
- Nanotechnology
Background:
- Developing molecular switches is key for complex molecular circuits and self-protection.
- All-electrically driven switches offer precise control for molecular devices.
Purpose of the Study:
- To synthesize and investigate the charge transport properties of benzothiadiazole (BTZ)-centered molecular wires.
- To explore bias voltage-driven switching behaviors and their underlying mechanisms.
Main Methods:
- Synthesis of BTZ-centered molecular wires with thiomethyl and pyridine anchors.
- Conductance measurements to analyze charge transport and switching behavior.
- Control experiments and theoretical calculations to understand switching origins.
Main Results:
- All synthesized wires demonstrated bias voltage-driven switching under low bias.
- Thiomethyl-anchored wires showed positive response switching, while pyridine-anchored wires exhibited negative response switching.
- High on/off conductance ratios achieved (up to 28.8 for positive, 30.2 for negative).
Conclusions:
- Switching characteristics are attributed to bias voltage-dependent frontier energy levels and Au-π interactions.
- Findings facilitate the design of high-performance bias voltage-driven molecular devices.
- Advances the field of molecular electronics with novel switching mechanisms.
More Related Videos
09:54Multifunctional, Micropipette-based Method for Incorporation And Stimulation of Bacterial Mechanosensitive Ion Channels in Droplet Interface Bilayers
Published on: November 19, 2015
09:57Imaging Membrane Potential with Two Types of Genetically Encoded Fluorescent Voltage Sensors
Published on: February 4, 2016
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Switching of BJT
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Bipolar Junction Transistor
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...