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Probing Thermal-Induced Strain at Atomic Interfaces via Raman Spectroscopy
Zixiu Cai1, Abhinav Biswas2, Xinyue Chen2
1Department of Mechanical, Aerospace, and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States.
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The thermal behavior of 2D materials is dominated by interfaces, but very few methods exist to probe such atomically sharp interfaces. This study uses Raman Spectroscopy to explore the thermal-induced strain at the interfaces between graphene and hexagonal boron nitride. By analyzing shifts in Raman peaks under varying excitation power and temperature, we demonstrate the interplay between strain and thermal behavior, particularly the influence of temperature-induced strain on the Raman peak position of graphene. Our study underscores the critical role of thermal expansion in governing interfacial behavior, which is also sensitive to the nature of the interface. Our study offers new insights into how Raman spectroscopy can be utilized to quantify the strain developed between various interfaces, and our findings pave the way for advancing the understanding of heat transfer mechanisms in next-generation nanodevices.
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