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Voltage-Controlled Dual-Band Electroluminescence from In-Doped hBN/GaN Heterojunctions for Switchable UV-Visible

Qiuguo Li1, Jinfeng Zhang2, Junda He2

  • 1Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou, Guangdong 516001, China.

ACS Applied Materials & Interfaces
|March 3, 2026
PubMed
Abstract

Keywords:
BNdefect centersdopingelectroluminescenceheterojunction

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