Related Experiment Video
Updated: Mar 6, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
All-Electrical Manipulation for Magnetism and Fano Resonance in the Molecular Junction Based on a Covalently
Hui-Qing Zhang1, Han Ma1, Xiao-Bei Zhang1
1Shandong Provincial Key Laboratory of Light Field Manipulation Physics and Applications and School of Physics and Electronics, Shandong Normal University, Jinan 250014, China.
Abstract:
Achieving all-electrical writing and reading of magnetization states in molecular spintronics devices is desirable for miniaturized electrical circuits. By means of the first-principles method, gate-modulated spin-dependent transport is investigated in a molecular junction based on a covalently functionalized graphene nanosheet. Induced by the localized spin-split flat band states, the transmission spectra exhibit obvious spin-resolved Fano resonance features. By exploiting the unique Fano line shape, a high/low conductance switch and spin polarization reversal from 93% to -90% are realized under the control of electrical gating. When the gate voltage reaches critical values, a magnetic-nonmagnetic transition occurs within the graphene nanosheet. The mechanism is explored by tracing the gating-induced change in the molecular states. Furthermore, efficient spin-dependent transport and gate tuning spin polarization under bias voltage are revealed. Our work provides a fantastic opportunity to design high-performance all-electrical spintronics devices.
Related Concept Videos
Ferromagnetism
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Field Effect Transistor
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Induced Electric Fields: Applications
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

