Related Experiment Video
Updated: Mar 6, 2026

Characterizing Dissipative Elastic Metamaterials Produced by Additive Manufacturing
Published on: June 28, 2024
Lossy phononic metamaterials for valley nonreciprocity
Shunda Yin1, Qiuyan Zhou1, Yuxiang Xi1
1Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, China.
Researchers demonstrate how coupling loss in phononic metamaterials can control valley dynamics, enabling unidirectional transport and boundary-localized states for valley-based devices.
Area of Science:
- Condensed Matter Physics
- Metamaterials Science
- Non-Hermitian Physics
Background:
- Non-Hermitian physics, marked by complex band spectra, has revolutionized condensed matter and metamaterials.
- Nonreciprocity combined with non-Hermitian gain can control valley dynamics, enabling phenomena like amplified topological whispering gallery modes for acoustic lasing.
Purpose of the Study:
- To reveal how coupling loss can manipulate valley degrees of freedom in phononic metamaterials.
- To explore the interplay between non-Hermitian physics and valley physics.
Main Methods:
- Theoretical modeling of phononic metamaterials.
- Experimental validation of predicted phenomena.
- Investigation of valley nonreciprocity effects.
Main Results:
- Demonstrated unidirectional transport of valley bulk states, functioning as a valley filter.
- Observed valley-dependent skin effects, localizing bulk states at opposite boundaries.
- Showcased valley-projected edge states with boundary-dependent lifetimes, enabling anomalous beam routing.
Conclusions:
- Coupling loss offers a simple method to control valley dynamics in phononic metamaterials.
- Findings provide insights into non-Hermitian and valley physics interplay.
- Opens avenues for valley-based device applications.
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Standing Waves in a Cavity
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Non-ohmic Devices
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
Imperfections in Crystal Structure: Non-Stoichiometric Defects

