Investigation of TID-induced capacitance variation in GaAs edge-lift capacitors and its effect on RF impedance

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Updated: Mar 6, 2026

Scanning-probe Single-electron Capacitance Spectroscopy
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Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

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Min-Su Kim1, Hyeon Jun Hwang2, Chang Goo Kang3

  • 1Department of Semiconductor Engineering, Mokpo National University, Jeonnam, 58554, Korea. msmy970@mnu.ac.kr.

Scientific Reports
|March 4, 2026
PubMed

Keywords:
Dielectric permittivityEdge-lift capacitor (ELC)Electromagnetic (EM) modelingGaAs MMIC passive componentsImpedance matching networkTotal ionizing dose (TID)

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