Schottky Barrier Diode
Biasing of Metal-Semiconductor Junctions
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Chaoyi Lyu1, Yanbin Chen1, Yingyi Ning1
1State Key Laboratory of Advanced Medical Materials and Devices, Tianjin Key Laboratory of Radiation Medicine and Molecular Nuclear Medicine, Key Laboratory of Radiopharmacokinetics for Innovative Drugs, Tianjin Institutes of Health Science, Institute of Radiation Medicine, Chinese Academy of Medical Sciences & Peking Union Medical College, Tianjin, 300192, P. R. China.
This study introduces a novel radiosensitizer for enhanced cancer therapy. The new material improves reactive oxygen species production and tumor penetration, enabling effective treatment with ultra-low X-ray doses.
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