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MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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In bromoethane, the three methyl protons are coupled to the two methylene protons that are three bonds away. In accordance with the n+1 rule, the signal from the methyl protons is split into three peaks with 1:2:1 relative intensities. The methylene protons appear as a quartet, with the relative intensities of 1:3:3:1.
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MOSFET: Depletion Mode01:20

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Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
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The Synchronous Machine Model is a fundamental tool in analyzing and ensuring the transient stability of power systems. This model simplifies the representation of a synchronous machine under balanced three-phase positive-sequence conditions, assuming constant excitation and ignoring losses and saturation. The model is pivotal for understanding the behavior of synchronous generators connected to a power grid, particularly during transient events.
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Multimachine Stability01:25

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Multimachine stability analysis is crucial for understanding the dynamics and stability of power systems with multiple synchronous machines. The objective is to solve the swing equations for a network of M machines connected to an N-bus power system.
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Coupling interactions are strongest between NMR-active nuclei bonded to each other, where spin information can be transmitted directly through the pair of bonding electrons. While nuclei polarize their electrons to the opposite spins, the bonding electron pair has opposite spins. Configurations with antiparallel nuclear spins are expected to be lower in energy. When coupling makes antiparallel states more favorable, J is considered to have a positive value. The one-bond coupling constant, 1J,...
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Related Experiment Video

Updated: Mar 12, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Stack-Engineered Mode Selection in PtMn/(Co/Pd)n Multilayers Enables Deterministic Analog Spin-Orbit Torque Synapses.

Abhijeet Ranjan1, Tamkeen Farooq2, Chong-Chi Chi3

  • 1Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.

ACS Applied Materials & Interfaces
|March 11, 2026
PubMed
Summary
This summary is machine-generated.

Spin-orbit-torque (SOT) devices can be tuned for binary or analog switching by adjusting the Co/Pd multilayer repeat number. This enables efficient analog SOT synapses for neuromorphic computing applications.

Keywords:
artificial neural networksartificial synapsesbinary switchingmultilevel switchingneuromorphic computingspin−orbit torque

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Area of Science:

  • Materials Science
  • Spintronics
  • Neuromorphic Computing

Background:

  • Spin-orbit-torque (SOT) devices offer potential for both memory and neuromorphic computing.
  • Controlling the switching mode (binary vs. analog) is crucial for device applications.
  • PtMn/(Co/Pd)n multilayers are investigated for their SOT switching characteristics.

Purpose of the Study:

  • To demonstrate that the Co/Pd repeat number (nCo/Pd) in PtMn/(Co/Pd)n multilayers dictates the magnetization reversal mechanism and switching mode.
  • To explore the potential of these multilayers as energy-efficient analog SOT synapses for neuromorphic hardware.

Main Methods:

  • Fabrication of PtMn/(Co/Pd)n multilayers with varying nCo/Pd.
  • Investigation of magnetization reversal mechanisms (nucleation, domain-wall propagation) via material parameter tuning.
  • Electrical conditioning of SOT devices to induce switching mode transitions.
  • Evaluation of device performance for neuromorphic applications, including synaptic plasticity and classification accuracy.

Main Results:

  • For nCo/Pd ≤ 7, binary switching via nucleation and domain-wall propagation was observed, transitioning to analog behavior with electrical conditioning.
  • For nCo/Pd ≥ 8, suppressed domain-wall propagation led to intrinsic nucleation-dominated analog switching.
  • High-nCo/Pd stacks exhibited enhanced analog behavior (smoother potentiation/depression, more intermediate states) and >97% neuromorphic classification accuracy after current conditioning.

Conclusions:

  • The Co/Pd repeat number is a key material parameter for controlling SOT switching modes in PtMn/(Co/Pd)n multilayers.
  • Stack design and hybrid tuning offer scalable strategies for developing energy-efficient analog SOT synapses.
  • These findings advance the integration of spintronic devices into neuromorphic computing architectures.