Related Experiment Video
Updated: Mar 15, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Highly radiative emission of room temperature-localized excitons enabled by charge-neutralized 0D quantum wells in 2D
Taeyoung Moon1,2, Hyeongwoo Lee1, Jihae Lee3
1Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea.
Abstract:
Nondiffusing localized excitons (XL) in two-dimensional semiconductors present a robust platform for mediating light-matter interactions, with potential applications in both photovoltaics and light-emitting devices. However, at room temperature, high thermal energy hinders XL formation, while excess charges diminish the quantum yield (QY) through nonradiative decay. Here, we present high-QY XL emission in ambient conditions by removing excess charges and inducing efficient exciton funneling into a Au nanohole. Specifically, by evaporating an H2O barrier between the n-type MoS2 and the Au substrate, we induce a grounding effect on electrons. Dominantly populating excitons are then funneled and bound to the nanohole through the strain-induced zero-dimensional quantum well effect. We confirm the exciton confinement efficiency of ~98% using a drift-diffusion model, enabling bright XL emission at the nanoscale. Using tip-induced gigapascal-scale pressure, we control XL dynamics and QY in a reversible manner. Our approach provides an innovative strategy for XL-based nanophotonic devices.
More Related Videos
Related Concept Videos
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Types of Semiconductors
Fermi Level
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
Carrier Generation and Recombination
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
Energy Bands in Solids
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...

