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Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

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Wavelength-stable InGaN-based amber micro-LEDs.

Zhiyuan Liu, Zuojian Pan, Haodong Zhang

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    |March 13, 2026
    PubMed
    Summary
    This summary is machine-generated.

    Researchers developed InGaN amber micro-LEDs using bulk InGaN, achieving excellent wavelength stability. This breakthrough minimizes spectral shifts, enhancing micro-LEDs for displays and communications.

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    Area of Science:

    • Materials Science
    • Optoelectronics
    • Semiconductor Physics

    Background:

    • Indium Gallium Nitride (InGaN)-based micro-LEDs with long emission wavelengths often suffer from blue-shifts due to the quantum-confined Stark effect (QCSE).
    • This spectral instability limits their use in advanced display technologies and visible light communication (VLC).

    Purpose of the Study:

    • To fabricate InGaN amber micro-LEDs with enhanced wavelength and color stability.
    • To investigate the use of a bulk InGaN active region as an alternative to conventional multiple quantum well (MQW) structures.

    Main Methods:

    • Fabrication of 40 μm pixel-sized InGaN amber micro-LEDs.
    • Utilized a thick InGaN film (bulk InGaN) as the active region, deviating from standard MQW designs.
    • Characterized the emission wavelength shift under varying injection current densities.

    Main Results:

    • Achieved minimal wavelength shift from 618 nm to 608 nm across a wide current range (5 μA to 5000 μA).
    • Demonstrated exceptional wavelength and color stability with only a 10 nm shift over three orders of magnitude of current.
    • The bulk InGaN active region effectively mitigated the QCSE-induced spectral instability.

    Conclusions:

    • The bulk InGaN approach offers a viable solution to spectral instability in long-wavelength micro-LEDs.
    • These stable micro-LEDs show significant potential for high-performance display and visible light communication applications.
    • This work paves the way for more reliable and color-accurate InGaN-based optoelectronic devices.