Amorphous InHfZnO/Ga₂O₃ heterojunction by plasma-enhanced atomic layer deposition for transparent photoelectric...

Artificial photoelectric synaptic devices have exhibited remarkable advantages of low power consumption and high speed for neuromorphic computing. By integrating photodetection and memory functions, these devices offer a promising framework to resolve the limitations of von Neumann architectures. Herein, transparent photoelectric synaptic devices were fabricated based on amorphous InHfZnO/Ga₂O₃ heterojunction by plasma-enhanced atomic layer deposition. The heterojunction was comprehensively characterized with various techniques. For the fabricated devices, critical synaptic characteristics, including short-term plasticity (STP), paired-pulse facilitation (PPF), and long-term plasticity (LTP), were systematically characterized and evaluated under various optical conditions and temperatures. Based on temperature-dependent performance variations, the temperature-tunable mechanism of the devices was analyzed in terms of oxygen vacancy concentration evolution.