Stress-Doped Interface Synergy: Unraveling the Atomic-Scale Corrosion Initiation of Al/Al₂Cu Interfaces with Fe-Si...

In this study, first-principles calculations were employed to systematically investigate the adsorption of Cl^- on Al₂Cu(110) surfaces, clean Al(111)/Al₂Cu(110) interfaces, and Fe/Si-doped interfaces, as well as the influence of strain on interfacial electronic structure and corrosion activity. When Cl^- is adsorbed on Al sites, the bonding between Cl and Al exhibits strong ionic characteristics with localized charge transfer, while adsorption on Cu sites is characterized by more delocalized, covalent interactions. This competition dictates the site-dependent stability of adsorption. Through geometric-electronic synergy, the interface functions as both a "Cl^- enrichment zone" and an "activity source," significantly favoring Cl^- adsorption at high-activity anodic sites such as Al-hole and Al-bridge. Conversely, Cu-top sites maintain a high work function and an inert cathodic nature, facilitating the formation of efficient micro-galvanic couples across the interface. Moreover, Fe/Si doping further modulates the interfacial electronic landscape: Si serves as an effective strengthening element due to its low substitution energy and high stability, while Fe primarily forms a solid solution on the Al side, potentially introducing galvanic corrosion risks. Stress analysis indicates that tensile strain systematically enhances surface activity by lowering the work function, while compressive strain non-monotonically influences corrosion through a three-stage mechanism involving the "densification-cracking-plastic relaxation" of the passive film. These findings elucidate the atomistic origins of corrosion initiation at Cu-Al composite interfaces and provide a theoretical foundation for enhancing corrosion resistance through alloy design and strain engineering.