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Adaptive reinforcement learning for lithography optimization: a scalable AI-driven solution for next-generation

Umar Rashid1,2, Fahad Shafique1, Hamza Atif1

  • 1Department of Electrical Engineering, University of Engineering and Technology, New Campus, Lahore, Pakistan.

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|March 16, 2026
PubMed
Summary

Adaptive Reinforcement Learning for Lithography Optimization (ARLO) enhances semiconductor lithography by reducing pattern errors. This AI approach optimizes photomasks for sub-nanometer integrated circuit fabrication, improving precision and efficiency.

Keywords:
Computational lithographyDeep neural networksInverse lithography technologyMask optimizationReinforcement learningSemiconductor manufacturing

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Area of Science:

  • Semiconductor Manufacturing
  • Computational Lithography
  • Artificial Intelligence in Engineering

Background:

  • Semiconductor lithography is critical for integrated circuit (IC) fabrication, representing ~30% of costs.
  • Shrinking feature sizes to sub-nanometer scales introduce optical diffraction and distortion challenges.
  • Traditional Optical Proximity Correction (OPC) is insufficient; Inverse Lithography Technology (ILT) is computationally intensive.

Purpose of the Study:

  • To introduce Adaptive Reinforcement Learning for Lithography Optimization (ARLO) for advanced photomask optimization.
  • To address the scalability and computational complexity limitations of existing ILT methods.
  • To improve pattern fidelity and reduce process variations in semiconductor lithography.

Main Methods:

  • Developed a U-Net-based framework integrating self-attention and reinforcement learning (RL).
  • Employed iterative photomask optimization using real-time lithographic simulations.
  • Evaluated performance on the LithoBench benchmark against state-of-the-art methods.

Main Results:

  • ARLO achieved a 37.8% reduction in [Formula: see text] Loss and 74.0% reduction in Process Variation Band (PVB) versus GAN-OPC.
  • Demonstrated significant improvements over Deep LithoNet (DLN) and RL-ILT in both [Formula: see text] Loss and PVB.
  • Maintained a competitive runtime of 0.035 seconds per patch despite increased shot counts.

Conclusions:

  • ARLO presents a scalable and efficient solution for next-generation semiconductor manufacturing.
  • The proposed framework effectively optimizes photomasks, enhancing pattern fidelity and reducing process variations.
  • ARLO offers a promising AI-driven approach to overcome challenges in sub-nanometer lithography.