Related Experiment Video
Updated: Mar 18, 2026

Rapid in-silico Battery Electrolyte Electrochemical Reaction Generation using 3T-VASP Multi-Scale Energy Minimization
Published on: August 22, 2025
Efficient and accurate spatial mixing of machine learned interatomic potentials for materials science
Fraser Birks1, Matthew Nutter1,2, Thomas D Swinburne3
1Warwick Centre for Predictive Modelling, School of Engineering, University of Warwick, Coventry, UK.
Abstract:
Machine-learned interatomic potentials can offer near first-principles accuracy but are computationally expensive, limiting their application to large-scale molecular dynamics simulations. Inspired by quantum mechanics/molecular mechanics methods, we present ML-MIX, a CPU- and GPU-compatible LAMMPS package to accelerate simulations by spatially mixing interatomic potentials of different complexities, allowing deployment of modern MLIPs even under restricted computational budgets. We demonstrate our method for ACE, UF3, SNAP and MACE potential architectures and demonstrate how linear 'cheap' potentials can be distilled from a given 'expensive' potential, allowing close matching in relevant regions of configuration space. The functionality of ML-MIX is demonstrated through tests on point defects in Si, Fe and W-He, in which speedups of up to 11× over ~8000 atoms are demonstrated, without sacrificing accuracy. The scientific potential of ML-MIX is demonstrated via two case studies in W, measuring the mobility of screw dislocations with ACE/ACE mixing and the implantation of He with MACE/SNAP mixing. The latter returns He reflection coefficients which (for the first time) match experimental observations up to an He incident energy of 80 eV-demonstrating the benefits of deploying state-of-the-art models on large, realistic systems.
Related Concept Videos
Hybridization of Atomic Orbitals I
Intermolecular vs Intramolecular Forces
The Thermodynamics of Mixing
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Molecular Orbital Theory II
Predicting Molecular Geometry

