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Related Concept Videos

Electrical Synapses01:28

Electrical Synapses

11.7K
Electrical synapses found in all nervous systems play important and unique roles. In these synapses, the presynaptic and postsynaptic membranes are very close together (3.5 nm) and are actually physically connected by channel proteins forming gap junctions.
Gap junctions allow the current to pass directly from one cell to the next. In contrast, in the chemical synapse, the neurotransmitters carry the information through the synaptic cleft from one neuron to the next. They consist of two...
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Author Spotlight: Modular Neuronal Networks for Analyzing Brain Functions
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Controllable and Cost-Efficient Three-Terminal GaN Nano-Synapse for Brain-Inspired Computing.

Xiushuo Gu1, Zhiyang Liu2,3, Jianya Zhang4

  • 1State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China.

Small (Weinheim an Der Bergstrasse, Germany)
|March 17, 2026
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Summary

Researchers developed a low-cost, three-terminal artificial synaptic nano-device using gallium nitride (GaN) nanowires. This device demonstrates controllable synaptic plasticity and cognitive behaviors, paving the way for advanced neuromorphic electronics.

Keywords:
GaN nanowiredielectrophoretic methodneuromorphic computingsynaptic nano‐devicethree‐terminal nano‐synapse

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Area of Science:

  • Materials Science
  • Neuroscience
  • Electronics Engineering

Background:

  • Developing controllable, low-cost three-terminal synaptic nano-devices is crucial for neuromorphic electronics.
  • Precise nanowire alignment and stable electrical gating remain significant challenges.

Purpose of the Study:

  • To propose and demonstrate a three-terminal artificial synaptic nano-device based on GaN nanowires.
  • To overcome challenges in nanowire placement and electrical gating for synaptic devices.

Main Methods:

  • Utilized a dielectrophoretic-assisted assembly strategy for controllable nanowire placement.
  • Engineered a gate-coupled interface for robust synaptic plasticity.
  • Modulated optical spike parameters and gate voltages to emulate cognitive behaviors.

Main Results:

  • Demonstrated gate-tunable synaptic plasticity, including short-/long-term memory transition, paired-pulse facilitation, and spike-timing-dependent plasticity.
  • Emulated learning-forgetting-relearning behaviors, with negative gating accelerating memory reinforcement.
  • Achieved over 1,000% enhancement in postsynaptic current and >95% recognition accuracy in a spiking neural network.

Conclusions:

  • The developed GaN nanowire nano-synapse offers a cost-efficient and effective building block for next-generation neuromorphic systems.
  • Gate-regulated optoelectronic mechanisms, including carrier modulation and persistent photoconductivity, are key to device performance.
  • This approach enables robust and tunable synaptic functions essential for advanced artificial intelligence.