Solution-processable homoleptic aluminum(III) catecholaldimine complex as an active material for RRAM switching
Vivek Sharma1, Anupam Chetia2, Rishabh Raj Upadhyay2
1Department of Chemistry, Indian Institute of Technology Jodhpur, Rajasthan-342030, India. rkmetre@iitj.ac.in.
Dalton Transactions (Cambridge, England : 2003)
|March 17, 2026
Summary
We synthesized a new aluminum complex with a redox-active ligand for potential use in electronic devices. This molecular complex demonstrates promising properties for fabricating efficient resistive switching memory devices.
Area of Science:
- Coordination Chemistry
- Materials Science
- Nanotechnology
Background:
- Development of novel molecular materials for electronic applications is crucial.
- Aluminum complexes offer potential due to their abundance and tunable properties.
- Redox-active ligands can impart unique electronic functionalities.
Purpose of the Study:
- To synthesize and characterize a new mononuclear aluminum complex with a redox-active ligand.
- To investigate the structural, optical, and electrochemical properties of the complex.
- To evaluate the potential of the complex as an active material in resistive switching memory devices.
Main Methods:
- Synthesis of the aluminum complex using (4,6-di-tert-butyl-2,3-dihydroxybenzylidene)furan-2-carbohydrazide (LH3) and aluminum nitrate.
- Structural characterization via single-crystal X-ray diffraction.
- Spectroscopic (HRMS, UV-vis, FTIR) and thermal (TGA, CHN) analysis.
- Electrochemical characterization using cyclic voltammetry.
- Fabrication and testing of resistive switching memory devices.
Main Results:
- Successful synthesis and octahedral coordination of the aluminum complex (1) with the catecholaldimine ligand.
- Experimental absorption bands at 225 and 354 nm, consistent with TD-DFT calculations.
- Electrochemical analysis revealed multiple redox peaks, indicating redox activity.
- The fabricated memory device exhibited bipolar resistive switching with an ON/OFF ratio of ~10^3.
- The device demonstrated stable performance over 10^2 cycles and long-term state stability.
Conclusions:
- A novel mononuclear aluminum complex with a redox-active ligand was successfully synthesized and characterized.
- The complex exhibits promising optical and electrochemical properties.
- The aluminum complex shows significant potential for application in high-performance non-volatile resistive memory devices.
- This research opens new avenues for designing molecular memory materials based on Earth-abundant metals.
More Related Videos
Related Concept Videos
Acid Halides to Alcohols: LiAlH4 Reduction
4.3K
Acid halides are reduced to alcohols in the presence of a strong reducing agent like lithium aluminum hydride.
The mechanism proceeds in three steps. First, the nucleophilic hydride ion attacks the carbonyl carbon of the acid halide to form a tetrahedral intermediate. Next, the carbonyl group is re-formed, and the halide ion departs as a leaving group, generating an aldehyde. A second nucleophilic attack by the hydride yields an alkoxide ion, which, upon protonation, gives a primary alcohol as...
The mechanism proceeds in three steps. First, the nucleophilic hydride ion attacks the carbonyl carbon of the acid halide to form a tetrahedral intermediate. Next, the carbonyl group is re-formed, and the halide ion departs as a leaving group, generating an aldehyde. A second nucleophilic attack by the hydride yields an alkoxide ion, which, upon protonation, gives a primary alcohol as...
4.3K
MOS Capacitor
1.7K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.7K


