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Extended coupled-wave method for the light absorption of an EUV grid mask
Applied Optics
|March 17, 2026
Summary
This study introduces an extended potential transmittance method to accurately calculate EUV mask absorption. This approach overcomes energy conservation issues in lithography simulation, improving EUV mask analysis.
Area of Science:
- Optics and Photonics
- Computational Physics
- Materials Science
Background:
- Rigorous coupled-wave analysis (RCWA) is used for EUV mask simulation.
- RCWA provides complex light amplitude but not direct EUV light absorption.
- Standard algorithms face energy non-conservation issues at material boundaries.
Purpose of the Study:
- To introduce an extended potential transmittance method for EUV mask absorption analysis.
- To address energy non-conservation problems in EUV mask simulations.
- To accurately determine EUV light absorption distribution in grating masks.
Main Methods:
- Developed an extended potential transmittance method.
- Analyzed internal and external electromagnetic field distribution.
- Calculated absorptivity and power changes for different diffraction orders.
- Summed power distribution of all diffracted light for total absorption.
Main Results:
- The extended potential transmittance method accurately describes mask absorption characteristics.
- It accounts for absorptivity of the film system and power changes in diffracted orders.
- The method ensures energy conservation at the absorption material boundary.
- Total grating layer absorption is determined by summing individual diffracted light power distributions.
Conclusions:
- The extended potential transmittance method offers a robust solution for EUV mask absorption simulation.
- It overcomes limitations of traditional RCWA by providing direct absorption data and ensuring energy conservation.
- This method enhances the accuracy of lithography imaging simulation for EUV masks.
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