Multi-Mode Operation and Reconfigurable Rectification in Schottky-Barrier Vertical Organic Transistors

Schottky-barrier vertical organic field-effect transistors (SB-VOFETs) provide exceptional current densities and vertical integration through gate-modulated Schottky injection. However, conventional characterization methods have limited our understanding of their full operational envelope and inherent hybrid transistor-diode nature. In this work, we conduct comprehensive bias characterization across all operational regimes with SB-VOFET featuring nanoporous silver source electrodes. Our findings demonstrate that in addition to standard transistor operation the device acts as a gate-tunable Schottky diode over a broad voltage range, a behavior often overlooked. To explain this, we propose a hybrid dual-path model that encompasses gate-insensitive I-type and gate-tunable L-type currents, which is validated by technology computer-aided design simulations. By leveraging this gate-programmability, we demonstrate a reconfigurable rectifier within a single device, enabling dynamic switching between rectification and quasi-ohmic conduction. This work broadens the characterization perspective and unlocks the latent multifunctionality of SB-VOFETs for next-generation organic electronics.