Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Half wave rectifier

Half wave rectifier

A half-wave rectifier is a fundamental circuit in electronics, designed to convert alternating current (AC) voltage into a unidirectional voltage. It utilizes the simplest form of diode rectification, where the circuit comprises a single diode in series with a load resistor and an AC power source.

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Threshold Voltage Modulation and Performance Enhancement in Indium Gallium Zinc Oxide/hafnium Zirconium Oxide Ferroelectric Field-Effect Transistors via Interface Dipole Engineering.

ACS applied materials & interfaces·2026

Same author

Diffusive memristors in the edge of chaos.

Nature communications·2026

Same author

Beyond conventional CO<sub>2</sub> electroreduction: emerging paradigms for practical carbon conversion.

Chemical communications (Cambridge, England)·2026

Same author

Preliminary in Vitro Study on an RFID-Tagged Gauze Detection System to Prevent Retention During Laparoscopic Procedures.

Surgical innovation·2026

Same author

Machine-learning-guided inverse design of lead-free relaxors enabled by multimodal literature mining.

Nature communications·2026

Same author

Direct Observation of Conduction Mechanism in Te-Based Selector-Only Memory via Low-Frequency Noise Characterization.

Nano letters·2026

Same journal

Demonstration of a quantum C-NOT gate in a time-multiplexed fully reconfigurable photonic processor.

Nature communications·2026

Same journal

Nonlinear quantum light source with van der Waals ferroelectric NbOX<sub>2</sub> (X = Br, I).

Nature communications·2026

Same journal

Antagonistic histone H2A variants and autonomous heterochromatin formation shape epigenomic patterns in Arabidopsis.

Nature communications·2026

Same journal

The long tail of nitrate pollution in groundwater challenges governance of global water quality.

Nature communications·2026

Same journal

Select microbial metabolites promote tau aggregation in a murine tauopathy model.

Nature communications·2026

Same journal

Warming climate has lengthened global intense tropical cyclone seasons.

Nature communications·2026

See all related articles

Search research articles

Related Experiment Video

Updated: Mar 19, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Programmable ferroelectric rectifier for reliable and efficient neuromorphic crossbar array.

Youngmin Kim¹, Yoon Jung Lee^1,2,3, Jiwoong Yang⁴

¹Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul, Republic of Korea.

Nature Communications

|March 18, 2026

Summary

This summary is machine-generated.

Researchers developed novel memristor devices using barium-substituted bismuth ferrite (BBFO) for energy-efficient neuromorphic computing. These devices exhibit excellent rectification and synaptic behavior, paving the way for advanced computing hardware.

More Related Videos

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

Optrode Array for Simultaneous Optogenetic Modulation and Electrical Neural Recording

Optrode Array for Simultaneous Optogenetic Modulation and Electrical Neural Recording

Published on: September 1, 2022

Related Experiment Videos

Last Updated: Mar 19, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

Optrode Array for Simultaneous Optogenetic Modulation and Electrical Neural Recording

Optrode Array for Simultaneous Optogenetic Modulation and Electrical Neural Recording

Published on: September 1, 2022

Area of Science:

Materials Science
Solid State Physics
Computer Engineering

Background:

Neuromorphic computing hardware demands energy efficiency, scalability, and reliable conduction.
Ferroelectric materials in memristors offer a promising solution through electrostatically modulated conduction.

Purpose of the Study:

To develop and characterize memristor devices using functional ferroelectric materials for neuromorphic applications.
To investigate the role of material composition in achieving high-performance memristive behavior.

Main Methods:

Fabrication of epitaxial heterostructures: Pt/Ba₀.₂Bi₀.₈FeO₃ (BBFO)/SrRuO₃/SrTiO₃.
Characterization of memristor devices for electrical properties, including rectifying ratio and off-state current.
Analysis of ferroelectric polarization and oxygen vacancy migration under pulsed bias.

Main Results:

Memristor devices achieved a rectifying ratio > 10⁶ and off-state current < 10⁻¹² A.
20% Ba substitution in BiFeO₃ coupled ferroelectric polarization with oxygen vacancy migration, enabling reliable synaptic behavior (>10⁷ cycles, near-zero nonlinearity).
Selector-free crossbar arrays (CBAs) were implemented, mitigating sneak currents and cell variability.

Conclusions:

BBFO-based memristors offer a robust material platform for high-performance neuromorphic systems.
The developed devices address key challenges in energy-efficient and scalable neuromorphic hardware.
BBFO's unique properties enable selector-free CBA implementation for advanced computing.