Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of P-N Junction01:16

Biasing of P-N Junction

2.7K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
2.7K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

907
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
907
Diode: Forward bias01:20

Diode: Forward bias

2.6K
In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
2.6K
Diode: Reverse bias01:14

Diode: Reverse bias

2.7K
A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
2.7K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Time-Sequence Multifunctional Optoelectronic Synapse Enabled by a PtSe<sub>2</sub>/α-In<sub>2</sub>Se<sub>3</sub>/MoS<sub>2</sub> Ferroelectric Heterojunction.

ACS applied materials & interfaces·2026
Same author

Development of Circular CpG Oligodeoxynucleotides for Prolonged Immunostimulation and Synergistic Antitumor Chemotherapy in Melanoma.

Journal of medicinal chemistry·2026
Same author

Identification of Pancreatic Ductal Adenocarcinoma Extracellular Matrix Signatures from In-Depth Proteomic Profiling that Correlate with Lymphocyte Infiltration.

Cancer research communications·2026
Same author

Cadmium-induced disruptions in soil nitrogen cycling: Unraveling microbial impacts, functional gene dynamics, and biochar's restoration potential.

Ecotoxicology and environmental safety·2026
Same author

Spermine Lipid Assembled Nanoparticles for siRNA Delivery and Androgenetic Alopecia Therapy.

ACS applied materials & interfaces·2026
Same author

High-resolution infrared speckle wavemeter under weak illumination via sum-frequency generation in a thin-film lithium niobate waveguide.

Applied optics·2026
Same journal

Long-term stabilization of intensity-difference squeezing from four-wave mixing in rubidium vapor.

Optics express·2026
Same journal

Robust 3D topography measurement of large-range high-aspect-ratio structures based on dual-domain statistical filtering in SD-OCT.

Optics express·2026
Same journal

Broadband transmissive terahertz metasurface for simultaneous quad-mode OAM multiplexing.

Optics express·2026
Same journal

Leveraging two-dimensional materials for high-sensitivity optical sensors: quasi-bound states in the continuum within hybrid metasurfaces.

Optics express·2026
Same journal

Resolution investigation for dual-spherical-wave optical scanning holographic microscopy: methods and performance.

Optics express·2026
Same journal

Robustness of parallel subnetwork-filtered diffractive deep neural networks.

Optics express·2026
See all related articles

Related Experiment Video

Updated: May 5, 2026

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
10:17

20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier

Published on: July 12, 2017

12.4K

1064 nm InGaAsP multi-junction laser power converters via reverse-bias method.

Di Feng, Jun Wang, Hongru Li

    Optics Express
    |March 18, 2026
    PubMed
    Summary
    This summary is machine-generated.

    Researchers developed advanced laser power converters (LPCs) for efficient wireless energy transmission. Optimized multi-junction LPCs achieved over 45% efficiency, demonstrating a new design approach for enhanced power conversion.

    More Related Videos

    Infrared Degenerate Four-wave Mixing with Upconversion Detection for Quantitative Gas Sensing
    10:42

    Infrared Degenerate Four-wave Mixing with Upconversion Detection for Quantitative Gas Sensing

    Published on: March 22, 2019

    8.0K
    Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy
    08:48

    Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy

    Published on: November 22, 2019

    7.0K

    Related Experiment Videos

    Last Updated: May 5, 2026

    20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
    10:17

    20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier

    Published on: July 12, 2017

    12.4K
    Infrared Degenerate Four-wave Mixing with Upconversion Detection for Quantitative Gas Sensing
    10:42

    Infrared Degenerate Four-wave Mixing with Upconversion Detection for Quantitative Gas Sensing

    Published on: March 22, 2019

    8.0K
    Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy
    08:48

    Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy

    Published on: November 22, 2019

    7.0K

    Area of Science:

    • Optoelectronics
    • Semiconductor Devices
    • Wireless Power Transfer

    Background:

    • Laser power converters (LPCs) are crucial for efficient wireless energy transmission.
    • Optimizing LPC design is essential for maximizing energy conversion efficiency.

    Purpose of the Study:

    • To design and fabricate high-efficiency single- and multi-junction 1064 nm laser power converters on InP substrates.
    • To demonstrate a systematic design optimization approach for multi-junction LPCs.

    Main Methods:

    • Fabrication of single- and multi-junction LPCs on InP substrates.
    • Optimization of tunnel junctions and subcell thicknesses.
    • Reverse-bias analysis for current mismatch and absorption coefficient extraction.

    Main Results:

    • A double-junction LPC achieved 45.7% efficiency at 10°C and 11.504 W/cm².
    • An initial six-junction LPC reached 39.8% efficiency at 7°C and 30.6 W/cm².
    • Redesigned six-junction LPC achieved 42.4% efficiency at 5°C and 28 W/cm² after optimization.

    Conclusions:

    • The study successfully demonstrated a systematic design optimization for multi-junction LPCs.
    • Optimized LPCs show significant potential for improving wireless energy transmission efficiency.
    • Accurate material property extraction (e.g., InGaAsP absorption coefficient) is key to performance enhancement.