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3-dB bandwidth enhanced InGaAs PIN photodiode by inductive CPW electrode for datacenter applications.

Shinmo An, Duk-Jun Kim, Seok-Jun Yun

    Optics Express
    |March 18, 2026
    PubMed
    Summary

    A novel coplanar waveguide electrode design enhances the 3-dB bandwidth of InGaAs PIN photodiodes. This technique extends bandwidth from 48 GHz to over 67 GHz by incorporating inductive gains.

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    Area of Science:

    • Optoelectronics
    • Semiconductor Devices
    • Microwave Engineering

    Background:

    • Indium Gallium Arsenide (InGaAs) positive-intrinsic-negative (PIN) photodiodes are crucial for high-speed optical communication.
    • Bandwidth limitations in photodiodes hinder data transmission rates.
    • Existing bandwidth extension techniques often involve complex fabrication or additional components.

    Purpose of the Study:

    • To demonstrate a 3-dB bandwidth extension technique for InGaAs PIN photodiodes.
    • To investigate the impact of coplanar waveguide (CPW) electrode design on photodiode performance.
    • To analyze the role of inductive gains and carrier transit times in bandwidth enhancement.

    Main Methods:

    • Designing coplanar waveguide (CPW) electrodes to introduce inductive gains.
    • Developing an equivalent circuit model that includes photo-generated carrier transit times.
    • Numerically analyzing electron and hole transit times.
    • Validating the model by comparing extracted RLC parameters with measured frequency response data.

    Main Results:

    • The proposed CPW electrode design successfully imposed inductive gains.
    • The equivalent circuit model accurately predicted the photodiode's frequency response when transit times were included.
    • A 3-dB bandwidth extension was achieved, increasing from 48 GHz to over 67 GHz at a -2.5 V bias voltage.

    Conclusions:

    • Reconfiguring the CPW electrode design is an effective method for extending photodiode bandwidth.
    • The inclusion of carrier transit time effects in circuit modeling is essential for accurate performance prediction.
    • This technique offers a simple yet powerful approach to enhance the speed of InGaAs PIN photodiodes.