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Patterning of Lead Halide Perovskite Device Stacks on CMOS Readout Using Selective Microfabrication Protocols.

Sergey Tsarev1,2, Erfu Wu1,3, Kyuik Cho4

  • 1Department of Chemistry and Applied Biosciences, Laboratory of Inorganic Chemistry, Zürich, Switzerland.

Advanced Materials (Deerfield Beach, Fla.)
|March 18, 2026
PubMed
Summary

We developed novel microfabrication techniques for lead halide perovskites, enabling their use in advanced semiconductor devices. This breakthrough facilitates the creation of high-performance perovskite-based optoelectronics through standard cleanroom processes.

Keywords:
complementary metal‐oxide semiconductorimage sensorlead‐halide perovskiteslithography, patterningmonolithic integrationphotodetector

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Nanotechnology

Background:

  • Lead halide perovskites offer unique optoelectronic properties for advanced devices.
  • Standard microfabrication is challenging due to perovskite sensitivity.
  • Precise patterning is crucial for applications like CMOS image sensors.

Purpose of the Study:

  • To develop perovskite-specific patterning processes compatible with standard cleanroom fabrication.
  • To enable the integration of lead halide perovskites into high-performance semiconductor devices.
  • To overcome fabrication challenges for perovskite-based optoelectronics.

Main Methods:

  • Surface passivation using sorbitan laurate to protect perovskite grain boundaries.
  • Modified phosphoric acid etchant with PBABr for selective TCO etching.
  • SF6 plasma treatment for perovskite conversion in interpixel gaps.

Main Results:

  • Developed a surface passivation technique allowing standard photoresists and developers.
  • Achieved selective etching of TCOs (e.g., ITO) without degrading the perovskite layer.
  • Successfully fabricated a 400x400 pixel perovskite CMOS image sensor using the integrated strategy.

Conclusions:

  • Established a pathway for standard microfabrication of lead halide perovskites.
  • Demonstrated the feasibility of high-performance perovskite optoelectronic devices.
  • Enabled precise pixel definition essential for high spatial resolution sensors.