1T-TCAM with binary storage enabling ternary matching via bias-controlled wildcards using a feedback field-effect...

In this study, we propose a reconfigurable one-transistor ternary content-addressable memory (1T-TCAM) cell based on a triple-gated feedback field-effect transistor with a nitride charge-trapping layer. The device employs binary data storage while enabling ternary matching through a bias-controlled wildcard operation. The energy band diagram, electrical characteristics, and TCAM operations, including cell-level functionality, sensing margin, search time, and 8-bit array performance, are systematically analyzed using a commercial TCAD simulator. The proposed 1T-TCAM supports three distinct search modes (Search '0', Search '1', and do not Care) by modulating the potential barrier in thep-i-nsilicon channel via gate-voltage control while maintaining binary storage. It exhibits high complementary metal-oxide-semiconductor process compatibility and achieves a short search time below 2 ns with a high on-current of ∼10µA. This results in a sensing margin exceeding 10¹⁰, demonstrating superior integration density and high-speed search performance.