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Related Concept Videos

Band Theory02:35

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When two or more atoms come together to form a molecule, their atomic orbitals combine and molecular orbitals of distinct energies result. In a solid, there are a large number of atoms, and therefore a large number of atomic orbitals that may be combined into molecular orbitals. These groups of molecular orbitals are so closely placed together to form continuous regions of energies, known as the bands.
The energy difference between these bands is known as the band gap.
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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
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Wide Bandgap Lanthanide Oxybromides High-κ Dielectrics for High-Performance Two-Dimensional Electronics.

Yingying Li1, Yue Tang1, Guobin Ma1

  • 1Shaanxi Key Laboratory For Advanced Energy Devices, School of Materials Science and Engineering, Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Normal University, Xi'an, P. R. China.

Advanced Materials (Deerfield Beach, Fla.)
|March 19, 2026
PubMed
Summary

New 2D lanthanide oxybromides (LnOBr) offer wide bandgaps and high dielectric constants, overcoming leakage current issues in 2D electronics. These materials enable high-performance transistors and integrated circuits.

Keywords:
2D electronicsLnOBrfield effect transistorhigh‐κ dielectricwide bandgap

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • High-κ single-crystal dielectrics are crucial for advanced 2D electronics.
  • Schottky emission in conventional dielectrics causes high leakage current, limiting device performance.
  • A wide bandgap is essential for effective dielectric materials in 2D devices.

Purpose of the Study:

  • To explore 2D lanthanide oxybromides (LnOBr) as novel high-κ dielectrics.
  • To investigate the bandgap, thickness tunability, and crystal quality of LnOBr materials.
  • To evaluate the dielectric properties and device performance of LaOBr.

Main Methods:

  • Synthesis of 2D LnOBr single crystals using chemical vapor deposition.
  • Characterization of bandgap (>5.7 eV), dielectric constant (14.8), leakage current (<10⁻⁶ A cm⁻²), and breakdown field strength (14.2 MV cm⁻¹).
  • Fabrication and testing of LaOBr top-gate MoS₂ transistors and integrated inverters.

Main Results:

  • LnOBr materials exhibit wide bandgaps, tunable thickness, and high-quality single-crystal structures.
  • 2D LaOBr demonstrated excellent insulating properties with a high dielectric constant and low leakage current.
  • LaOBr-based MoS₂ transistors showed superior performance, including high on/off ratio (10⁷) and negligible hysteresis.
  • Integrated inverters exhibited steep voltage transitions and high gain.

Conclusions:

  • 2D LnOBr materials are promising wide-bandgap, high-κ dielectrics for next-generation 2D electronics.
  • LaOBr offers a viable solution to leakage current issues, enabling high-performance and reliable 2D devices.
  • This research expands the library of dielectric materials for innovative electronic applications.