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Reliable Vapor-Deposited Tin Perovskites for High-Performance and Low-Power Complementary Electronics
Liping Du1, Xiaomin Yang1, Yuning Guo2
1Institute of Fundamental and Frontier Sciences, State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China.
Advanced Materials (Deerfield Beach, Fla.)
|March 19, 2026
Summary
Vapor deposition of tin (Sn2+) perovskites ensures reliable, high-performance p-type thin-film transistors (TFTs) by overcoming precursor inconsistencies. This method enables stable, low-power electronics, unlike solution-processed alternatives.
Area of Science:
- Materials Science
- Semiconductor Physics
- Nanotechnology
Background:
- Tin (Sn2+) perovskites are promising lead-free semiconductors for p-type thin-film transistors (TFTs).
- Reproducibility and reliability issues hinder their practical application due to precursor chemistry and solvent coordination effects.
- Inconsistent film quality and device performance are major obstacles.
Purpose of the Study:
- To systematically benchmark commercial Sn2+ precursors for TFTs using both solution and vapor deposition routes.
- To identify a reliable and scalable deposition method for high-performance Sn2+ perovskite films.
- To demonstrate the potential of Sn2+ perovskite-based circuits for low-power electronics.
Main Methods:
- Systematic benchmarking of multiple commercial Sn2+ precursors.
- Comparison of solution processing and vapor deposition techniques.
- Characterization of film quality, TFT performance, and device stability.
Main Results:
- Vapor-deposited Sn2+ perovskite films exhibit consistent TFT performance (hole mobility ~30 cm2 V-1 s-1) and excellent stability, independent of precursor.
- Solution-processed devices show strong precursor dependence and inconsistent performance.
- Vapor-phase deposition enables precursor-agnostic formation of uniform, dense films with large grains by separating volatile impurities before nucleation.
Conclusions:
- Vapor-phase deposition is a robust and scalable platform for reliable Sn2+ perovskite film formation.
- This method overcomes the limitations of precursor variability, paving the way for consistent device fabrication.
- Integrated p-type Sn2+-perovskite/n-type oxide circuits demonstrate high gain and ultra-low picowatt power consumption, establishing a reliable route for low-power complementary electronics.
