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Pressure-Induced Discovery of a Topological Phase of Bi4Br4 with AA''-Stacking
Honglin Li1,2, Fuyi Wang3, Zhenyu Wang1,4
1Key Laboratory of Material Simulation Methods and Software of Ministry of Education, College of Physics, Jilin University, Changchun 130012, China.
Abstract:
Bismuth halides Bi4X4 (X = Br, I) consist of quasi-one-dimensional van der Waals chains whose interchain stacking can be reshaped by pressure, potentially reprogramming topology. Using CALYPSO structure searches with first-principles enthalpy ranking, we uncover a previously unreported C2/m phase of Bi4Br4 featuring a novel AA″ stacking that becomes stable above ∼4 GPa and persists to at least 15 GPa. We map the transformation from known β-Bi4Br4 (AA stacking): under compression β develops an imaginary phonon mode, appears as a first-order saddle point in the crystal-solution landscape, and relaxes into the C2/m-AA″ structure with an estimated barrier of ∼40 meV/atom, explaining pressure-driven stacking rearrangement. With spin-orbit coupling, a band gap opens at symmetry crossings and a nontrivial inversion yields Z2 = (001; 0), identifying the AA″ phase as a weak topological insulator with gapless (100)/(010) surface states.
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