Related Experiment Video
Updated: Mar 21, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Field-driven electronic and topological modulation in the Weyl semimetal NbP
Gaël-Pacôme Nguimeya Tematio1, Trisha Salagaram1, Aniekan Magnus Ukpong2
1Department of Physics, University of Cape Town, Cape Town, South Africa.
None:
The Weyl semimetal NbP exhibits remarkable electronic properties arising from its nontrivial topology and symmetry-protected nodes. Here, we explore how tensile strain and external electric fields can modulate its electronic bands and topological characteristics using first-principles density functional theory combined with model Hamiltonian approaches. All calculations are performed within the plane-wave pseudopotential framework, including spin-orbit coupling, and maximally localized Wannier functions are employed to analyze the Berry curvature, Fermi arcs, and node evolution. Under a 4% tensile strain, NbP develops a small band gap of ∼0.05 eV along the Γ-Σ direction, accompanied by a reduction in carrier density near the Fermi energy. Increasing strain to 8% leads to a gap of ∼0.035 eV and further suppression of Fermi-level states, indicating strain-driven band reorganization. The application of electric fields produces minute but significant effects: at 0.51 V Å-1, band curvature shifts slightly, while at 1.29 V Å-1, a gap of ∼0.02 eV opens along the Γ-Spath. This controlled gap opening signifies a transition toward switchable electronic phases, highlighting NbP's potential in topological electronics and field-tunable quantum devices.
More Related Videos
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
P-N junction
π Electron Effects on Chemical Shift: Overview
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Theory of Metallic Conduction
In this theory, Newton's second law of motion is used to determine the acceleration of an electron in the presence of an applied electric field. Then, its velocity is expressed via this acceleration.
An electron moves through the crystal, containing positive ions,...

