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Bottom-up Fabrication of Bandgap-Tunable Patterned Lateral WS2-Janus W(SxSe1-x)Se Heterostructure Arrays
Ping Lu1, Ying Huangfu2, Zhihao Li2
1Hunan Key Laboratory of Two-Dimensional Materials and State Key Laboratory of Chemo and Biosensing, College of Chemistry and Chemical Engineering, Hunan University, Changsha, China.
Small (Weinheim an Der Bergstrasse, Germany)
|March 20, 2026
Summary
Researchers developed a new atomic substitution method to create tunable patterned lateral Janus heterostructures. This breakthrough enables precise control over composition and bandgap for advanced 2D electronic and optoelectronic devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Two-dimensional (2D) heterostructures are crucial for next-generation electronics and optoelectronics.
- Integrating heterostructure units with diverse physical properties is essential for advanced device fabrication.
- Current methods face challenges in achieving precise control over heterostructure properties.
Purpose of the Study:
- To demonstrate an atomic substitution method for creating composition- and bandgap-tunable patterned lateral Janus heterostructure arrays.
- To enable flexible construction of complex 2D lateral devices and integrated circuits.
Main Methods:
- Synthesis of patterned WS₂-WSe₂ lateral heterostructure arrays via laser-assisted epitaxial regrowth.
- Room-temperature hydrogen plasma-assisted sulfur substitution to create Janus W(SxSe₁₋x)Se structures.
- Composition and bandgap tuning achieved by controlling sulfur content (0 ≤ x ≤ 1).
Main Results:
- Successfully fabricated WS₂-Janus W(SxSe₁₋x)Se lateral heterostructure arrays.
- Demonstrated tunable composition and bandgap of W(SxSe₁₋x)Se, verified by DFT, XPS, Raman, and PL spectroscopy.
- Confirmed atomically clean and sharp interfaces within the lateral heterostructures.
Conclusions:
- The atomic substitution method provides unprecedented flexibility for constructing 2D lateral heterostructures.
- Introduction of bandgap-tunable Janus structures is vital for developing complex 2D lateral devices.
- This approach advances the integration of heterostructure units for next-generation integrated circuits.
