Sputtering yield for metal halide perovskite devices patterning.

Area of Science:

• Materials Science
• Semiconductor Physics
• Nanotechnology

Background:

• Metal halide perovskites (MHPs) are advanced semiconductors with exceptional optoelectronic properties.
• Instability in water and polar solvents presents a significant hurdle for MHP integration into CMOS technology and electronic systems.
• Dry etching techniques offer a promising solution for patterning and integrating MHPs.

Purpose of the Study:

• To investigate the efficacy of argon (Ar) ion milling for dry etching of metal halide perovskites.
• To validate simulated etch rates with experimental data and explore sputtering yield models for MHPs.
• To demonstrate the preservation of device functionality after Ar ion milling.

Main Methods:

• Utilized argon (Ar) ion milling for dry etching of various metal halide perovskite compositions.
• Employed Ziegler's model for simulating etch rates and validated predictions with experimental measurements.
• Fabricated photodetectors (PDs) to assess the impact of etching on device performance.

Main Results:

• Achieved Ar ion milling rates of approximately 1-2 nm/s at 700 eV across different perovskite compositions.
• Sputtering yield models, including simplified approaches for complex MHPs, showed good agreement with experimental data.
• Fabricated photodetectors retained their characteristic photoresponse after optimized etching, confirming functional preservation.

Conclusions:

• Argon ion milling is a viable dry etching technique for metal halide perovskites, suitable for CMOS integration.
• The study validates predictive models for sputtering yields, aiding in process optimization.
• Device functionality, as demonstrated by photodetectors, is maintained post-etching, supporting the practical application of MHPs in electronic devices.