Atomically Thin InSbSe₃ Layers for Multispectral Optical Imaging with Fast Photoresponse and Broadband Photodetection

Area of Science:

• Materials Science
• Optoelectronics
• Nanotechnology

Background:

• Two-dimensional (2D) broadband photodetectors enhance object identification by capturing information beyond human vision.
• Current photodetector limitations include narrow photoresponse ranges and slow response speeds, hindering widespread adoption.
• Advanced materials are crucial for overcoming these limitations in photodetector technology.

Purpose of the Study:

• To develop high-performance 2D photodetector devices utilizing novel materials.
• To investigate the optoelectronic properties and photoresponse range of 2D InSbSe3 nanosheets.
• To demonstrate the potential of these devices for multispectral imaging applications.

Main Methods:

• Fabrication of 2D InSbSe3 nanosheet-based photodetector devices.
• Characterization of optoelectronic properties including on/off ratio and photoresponsivity.
• Evaluation of photoresponse time and broadband photoresponse spectrum.
• Demonstration of optical imaging capabilities at various wavelengths.

Main Results:

• The 2D InSbSe3 photodetectors achieved a high on/off ratio (10^5) and photoresponsivity (5.14 A/W).
• An ultrashort photoresponse time of 6 ms was recorded at 520 nm with 0.2 V bias.
• A broad photoresponse was observed from ultraviolet (265 nm) to near-infrared (940 nm).
• Successful optical imaging was performed at 375, 520, and 785 nm.

Conclusions:

• 2D InSbSe3 nanosheet materials exhibit superior optoelectronic properties compared to many existing 2D ternary materials.
• The developed photodetectors show significant potential for low-power, high-sensitivity multispectral imaging systems.
• These findings pave the way for applications in machine vision, environmental monitoring, and medical diagnosis.