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Updated: Mar 25, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
Prediction of Nonlinear Flexoelectricity in Monolayer CrI3
Huiying Gao1,2,3, Xinlong Yang1,2,3, Wenjing Li1,2,3
1Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China.
None:
Flexoelectricity, the modification of electric polarization induced by strain gradients, is ubiquitous in all materials and is typically a minor effect in bulk materials represented as a linear function of curvature. However, in 2D materials, the curvature can be dramatically large due to their flexibility, which naturally raises an intriguing question of whether flexoelectricity extends beyond the linear form. Here, we reveal a type of nonlinear flexoelectricity that depends on both the curvature and its gradients through first-principles calculations. This nonlinear flexoelectric effect only presents in certain materials such as monolayer CrI3, which is a consequence of the simultaneous breaking of the in-plane and out-of-plane mirror symmetries perpendicular to the curvature direction. In contrast, materials like graphene, h-BN, and 2H-WTe2 monolayers with no such symmetry breaking do not present such a nonlinear flexoelectric effect. Furthermore, a method to detect the nonlinear felexoelectricity is also proposed. Our research thus enriches the spectrum of flexophysics and has potential applications in flexoelectrics.
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