Related Experiment Video
Updated: Mar 27, 2026

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
Published on: March 9, 2019
Nanoscale exchange-bias magnetic tunnel junctions enabled memristive synapse and leaky-integrate-fire neuron for
Zanhong Chen1, Dehang Zhu1, Ao Du1
1Fert Beijing Institute, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China.
None:
Neuromorphic computing implemented by spintronic memories offers computational advantages, including in-memory computing capability, high energy efficiency, and near-unlimited endurance. However, their basic units, magnetic tunnel junctions (MTJs), face inherent challenges in emulating analog synapses and spiking neurons due to their bistable resistance states and lack of bio-realistic switching dynamics. Here, we experimentally demonstrate on-chip co-integrated memristive synapse and leaky-integrate-fire (LIF) neuron designed with nanoscale exchange-bias MTJs (EB-MTJs). By exploiting the spatial distribution of antiferromagnets and its current-dependent modulation, we achieve stable continuous multi-state synaptic behavior with spike-timing-dependent-plasticity (STDP) characteristics in compact (~100 nm) EB-MTJs. Furthermore, time-resolved measurements reveal that EB-MTJs can be progressively programmed by 0.4 ns pulses, emulating LIF neuronal dynamics with high operational bandwidth in the gigahertz range. Finally, we construct a convolutional spiking neural network based on EB-MTJs and achieve 96% accuracy in gesture recognition via a hybrid backpropagation-STDP algorithm, highlighting their potential in neuromorphic computing.
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Integration of Synaptic Events
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The Role of Ion Channels in Neuronal Computation
Sometimes a single EPSP is strong enough to induce an action potential in the postsynaptic neuron. However, multiple presynaptic inputs must often create EPSPs around the same time for the postsynaptic neuron to be sufficiently depolarized to fire an action potential....
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...

