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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Localized Oxygen Plasma Interface Engineering for 1T'/2H-MoTe2 Heterostructure Dual-Gate Bidirectional Junction

Hanyu Wang1,2,3, Wenhui Luo1,2,3, Yiwei Wu1,2,3

  • 1Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China.

ACS Applied Materials & Interfaces
|March 25, 2026
PubMed
Summary

This study presents a novel dual-gate transistor using 2D materials for efficient logic integration. It overcomes threshold voltage issues, enabling reconfigurable circuits for advanced computing.

Keywords:
Schottky junctionambipolarelectrostatically controlledinterface regulationmetal−semiconductor field effect transistorsreconfigurable MoTe2

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Electrical Engineering

Background:

  • Bidirectional junction field-effect transistors (B-JFETs) are key for hardware-efficient logic integration.
  • Conventional B-JFETs face challenges with asymmetric threshold voltages and poor subthreshold swing (SS).

Purpose of the Study:

  • To demonstrate a dual-gate-regulated B-FET using a 1T'-MoTe2/2H-MoTe2 van der Waals (vdW) heterostructure.
  • To achieve reversible n/p-type conduction and optimize device performance through synergistic gate modulation.

Main Methods:

  • Fabrication of a dual-gate B-FET based on a 1T'-MoTe2/2H-MoTe2 vdW heterostructure.
  • Utilizing localized oxygen plasma (OP) treatment for ohmic contacts.
  • Employing dual-gate voltage programming for dynamic charge modulation and polarity switching.

Main Results:

  • Achieved reversible n/p-type conduction by modulating the built-in electric field with top and bottom gates.
  • Optimized SS and switching ratios for both n- and p-modes by leveraging material properties and OP treatment.
  • Demonstrated elimination of threshold mismatch through dual-gate-induced dynamic charge modulation.
  • Showcased reconfigurable circuits with robust complementary logic functionality and dynamic switching capabilities.

Conclusions:

  • The developed dual-gate B-FET effectively addresses threshold mismatch and performance degradation in conventional devices.
  • This work offers critical insights into polarity modulation and reconfigurable logic design for 2D heterojunction devices.
  • Paves the way for low-power, high-density integrated logic systems using advanced 2D materials.