Localized Oxygen Plasma Interface Engineering for 1T'/2H-MoTe₂ Heterostructure Dual-Gate Bidirectional Junction...

Area of Science:

• Materials Science
• Condensed Matter Physics
• Electrical Engineering

Background:

• Bidirectional junction field-effect transistors (B-JFETs) are key for hardware-efficient logic integration.
• Conventional B-JFETs face challenges with asymmetric threshold voltages and poor subthreshold swing (SS).

Purpose of the Study:

• To demonstrate a dual-gate-regulated B-FET using a 1T'-MoTe₂/2H-MoTe₂ van der Waals (vdW) heterostructure.
• To achieve reversible n/p-type conduction and optimize device performance through synergistic gate modulation.

Main Methods:

• Fabrication of a dual-gate B-FET based on a 1T'-MoTe₂/2H-MoTe₂ vdW heterostructure.
• Utilizing localized oxygen plasma (OP) treatment for ohmic contacts.
• Employing dual-gate voltage programming for dynamic charge modulation and polarity switching.

Main Results:

• Achieved reversible n/p-type conduction by modulating the built-in electric field with top and bottom gates.
• Optimized SS and switching ratios for both n- and p-modes by leveraging material properties and OP treatment.
• Demonstrated elimination of threshold mismatch through dual-gate-induced dynamic charge modulation.
• Showcased reconfigurable circuits with robust complementary logic functionality and dynamic switching capabilities.

Conclusions:

• The developed dual-gate B-FET effectively addresses threshold mismatch and performance degradation in conventional devices.
• This work offers critical insights into polarity modulation and reconfigurable logic design for 2D heterojunction devices.
• Paves the way for low-power, high-density integrated logic systems using advanced 2D materials.