Related Experiment Video
Updated: Mar 27, 2026

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
Atomic-Scale Engineering and Strain Modulation of Quantum Defects in Hexagonal Boron Nitride
Tianhao Yang1, Pengru Huang2,3, Zhizhan Qiu4
1Department of Chemistry, National University of Singapore, Singapore 117543, Singapore.
Researchers engineered atomic defects in hexagonal boron nitride (hBN) for quantum applications. They precisely controlled defects and their properties using advanced microscopy, paving the way for improved quantum emitters and spin qubits.
Area of Science:
- Materials Science
- Quantum Information Science
- Condensed Matter Physics
Background:
- Atomic defects in hexagonal boron nitride (hBN) are crucial for solid-state quantum emitters and spin qubits.
- A deterministic structure-property relationship at the atomic scale for these defects is currently lacking.
- This limits the full potential of hBN-based quantum technologies.
Purpose of the Study:
- To develop a method for atomic-scale engineering and characterization of quantum defects in hBN.
- To establish a link between defect structure and their quantum properties.
- To enable precise control over defect properties for quantum applications.
Main Methods:
- Utilized scanning tunneling microscopy/spectroscopy (STM/STS) and noncontact atomic force microscopy with a CO-functionalized tip.
- Employed controlled argon ion bombardment to create specific boron (VB) and nitrogen (VN) vacancies in hBN.
- Formed nanobubbles by encapsulating Ar to decouple defects from the substrate for electronic state probing.
Main Results:
- Successfully created and identified VB and VN defects in hBN.
- Observed distinct in-gap electronic states with phonon replicas for on-bubble VN defects.
- Demonstrated that nanobubble size tuning modulates strain, which in turn tunes the energy of defect electronic states, confirmed by DFT calculations.
Conclusions:
- Developed a strategy for atomic-level engineering and deciphering of quantum defects in hBN.
- Established a method for controlling quantum defect properties through local strain engineering.
- Provided fundamental insights into intrinsic defect structures and their manipulation for quantum information science.
Related Concept Videos
Imperfections in Crystal Structure: Stoichiometric Point Defects
Imperfections in Crystal Structure: Non-Stoichiometric Defects
Exceptions to the Octet Rule
Imperfections in Crystal Structure: Point, Line and Plane Defects
Hybridization of Atomic Orbitals I
Relation between Poisson's ratio, Modulus of Elasticity and Modulus of Rigidity

