Atomic-Scale Engineering and Strain Modulation of Quantum Defects in Hexagonal Boron Nitride

Tianhao Yang1, Pengru Huang2,3, Zhizhan Qiu4

  • 1Department of Chemistry, National University of Singapore, Singapore 117543, Singapore.

ACS Nano
|March 26, 2026
PubMed
Summary

Researchers engineered atomic defects in hexagonal boron nitride (hBN) for quantum applications. They precisely controlled defects and their properties using advanced microscopy, paving the way for improved quantum emitters and spin qubits.

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