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High-temperature memristors enabled by interfacial engineering
Jian Zhao1, Cameron S Jorgensen2, Krishnamurthy Mahalingam2
1Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, USA.
Science (New York, N.Y.)
|March 26, 2026
Summary
Graphene-based memristors achieve reliable high-temperature operation up to 700°C, overcoming thermal failure in conventional devices. This breakthrough utilizes 2D materials for extreme environment electronics.
Area of Science:
- Materials Science
- Electrical Engineering
- Solid State Physics
Background:
- High-temperature non-volatile memories (NVMs) are crucial for electronics in extreme environments.
- Conventional HfOx-based memristors face thermal failure due to electrode material diffusion at elevated temperatures.
Purpose of the Study:
- To develop and characterize NVMs with enhanced thermal stability for high-temperature applications.
- To investigate the role of interfacial engineering in improving memristor performance at extreme temperatures.
Main Methods:
- Fabrication and testing of graphene (Gra)/HfOx/tungsten (W) memristors.
- High-temperature annealing and characterization up to 700°C.
- Transmission electron microscopy (TEM) analysis.
- First-principles calculations.
Main Results:
- Gra/HfOx/W memristors demonstrated reliable operation up to 700°C with an ON/OFF ratio >103, retention >50 hours, and endurance >109 cycles.
- Conventional Pt/HfOx/W memristors showed thermal failure due to W diffusion into the Pt electrode.
- TEM revealed no significant W diffusion in Gra/HfOx/W devices.
- Calculations showed weaker W adsorption and higher diffusion barriers on graphene compared to Pt.
Conclusions:
- Graphene as an electrode material significantly enhances the thermal stability of HfOx-based memristors.
- Interfacial engineering with 2D materials is critical for enabling reliable high-temperature NVM technologies.
- Graphene/HfOx/W memristors offer a promising solution for electronics in extreme environments.
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