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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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Updated: Mar 28, 2026

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High-temperature memristors enabled by interfacial engineering.

Jian Zhao1, Cameron S Jorgensen2, Krishnamurthy Mahalingam2

  • 1Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, CA, USA.

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|March 26, 2026
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Summary
This summary is machine-generated.

Graphene-based memristors achieve reliable high-temperature operation up to 700°C, overcoming thermal failure in conventional devices. This breakthrough utilizes 2D materials for extreme environment electronics.

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Solid State Physics

Background:

  • High-temperature non-volatile memories (NVMs) are crucial for electronics in extreme environments.
  • Conventional HfOx-based memristors face thermal failure due to electrode material diffusion at elevated temperatures.

Purpose of the Study:

  • To develop and characterize NVMs with enhanced thermal stability for high-temperature applications.
  • To investigate the role of interfacial engineering in improving memristor performance at extreme temperatures.

Main Methods:

  • Fabrication and testing of graphene (Gra)/HfOx/tungsten (W) memristors.
  • High-temperature annealing and characterization up to 700°C.
  • Transmission electron microscopy (TEM) analysis.
  • First-principles calculations.

Main Results:

  • Gra/HfOx/W memristors demonstrated reliable operation up to 700°C with an ON/OFF ratio >103, retention >50 hours, and endurance >109 cycles.
  • Conventional Pt/HfOx/W memristors showed thermal failure due to W diffusion into the Pt electrode.
  • TEM revealed no significant W diffusion in Gra/HfOx/W devices.
  • Calculations showed weaker W adsorption and higher diffusion barriers on graphene compared to Pt.

Conclusions:

  • Graphene as an electrode material significantly enhances the thermal stability of HfOx-based memristors.
  • Interfacial engineering with 2D materials is critical for enabling reliable high-temperature NVM technologies.
  • Graphene/HfOx/W memristors offer a promising solution for electronics in extreme environments.