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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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Related Experiment Video

Updated: Mar 28, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Thickness-Modulated Band Engineering for Low-Resistance Contacts in Ultrathin Tellurium Transistors.

Minjae Kim1, Junho Ban2, Uigwan Shin2

  • 1National Institute for Nanomaterials Technology, Pohang University of Science and Technology, Cheongam-ro 77, Nam-gu, Pohang, Gyeongbuk 37673, Republic of Korea.

ACS Nano
|March 27, 2026
PubMed
Summary

Researchers improved performance in ultrathin tellurium (Te) transistors by engineering the source and drain regions with a raised source and drain (RSD) structure. This significantly reduced contact resistance and boosted current, enabling high-performance devices.

Keywords:
Schottky barriercontact resistancefield-effect-transistorraised source/drain contactstellurium

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Nanotechnology

Background:

  • Tellurium (Te) is a promising p-type semiconductor for scalable devices due to its high carrier mobility and stability.
  • High contact resistance in sub-5 nm Te channels hinders device performance.
  • Engineering the metal-semiconductor interface is crucial for optimizing ultrathin channel devices.

Purpose of the Study:

  • To address the challenge of high contact resistance in ultrathin tellurium (Te) channels.
  • To enhance the performance of Te-based transistors using a novel structural approach.
  • To investigate the impact of band structure engineering on contact resistance and carrier injection.

Main Methods:

  • Fabrication of a raised source and drain (RSD) structure in 4 nm-thick Te channels.
  • Electrical characterization at 77 K to suppress thermal effects and isolate interface properties.
  • Transport measurements to evaluate on-state current and contact resistance.

Main Results:

  • Achieved an estimated contact resistance of ≈1.7 kΩ·μm in 4 nm Te channels with the RSD structure.
  • Observed a >17-fold increase in on-state current compared to devices without RSD.
  • Demonstrated a >50-fold reduction in contact resistance using the RSD approach.
  • Thickness modulation at S/D terminals tuned the bandgap and enhanced tunneling current.

Conclusions:

  • The RSD structure effectively reduces contact resistance in ultrathin Te channels.
  • Band structure engineering via RSD significantly enhances transistor performance.
  • This scalable, low-temperature method is applicable to other ultrathin channel materials.