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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
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Moiré-Engineered Ferroelectric Transistors for Nearly Trap-Free, Low-Power, and Nonvolatile 2D Electronics.

Arup Singha1, Shaili Sett1, Kenji Watanabe2

  • 1Department of Physics, Indian Institute of Science, Bangalore 560012, India.

ACS Nano
|March 27, 2026
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Summary

Moiré patterns in twisted WSe2 create built-in ferroelectric polarization for ultralow-voltage electronics. This breakthrough enables stable, non-volatile 2D electronic devices without charge trapping, paving the way for advanced memory and logic technologies.

Keywords:
ferroelectricitymoiré patternnon-volatile memorysubthreshold swingtransition metal dichalcogenides

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Two-dimensional (2D) materials offer potential for ultralow-voltage and non-volatile electronics.
  • Moiré patterns in twisted 2D materials can induce ferroelectric polarization.
  • Stable polarization control without charge trapping remains a challenge in 2D ferroelectric field-effect transistors (FeFETs).

Purpose of the Study:

  • To demonstrate a moiré-engineered FeFET using twisted WSe2 bilayers.
  • To achieve efficient polarization-channel coupling and trap-suppressed operation.
  • To explore ultralow-voltage and non-volatile electronic functionality in 2D materials.

Main Methods:

  • Fabrication of FeFETs using twisted WSe2 bilayers with atomically clean van der Waals interfaces.
  • Characterization using capacitance-voltage spectroscopy.
  • Device performance evaluation including subthreshold swing and memory window.
  • Landau-Ginzburg-Devonshire modeling for ferroelectric switching analysis.

Main Results:

  • Demonstrated ultralow-voltage operation with a subthreshold swing of 64 mV/decade.
  • Achieved a stable non-volatile memory window of 0.10 V.
  • Exhibited high carrier mobility, comparable to advanced silicon devices.
  • Indicated ultrafast ferroelectric switching (approximately 0.5 μs).

Conclusions:

  • Moiré-engineered ferroelectricity in twisted WSe2 provides a scalable route for ultraclean, low-power, non-volatile 2D electronics.
  • This approach bridges atomistic lattice engineering with functional device architectures.
  • The findings support the development of next-generation memory and logic technologies.