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Size-Dependent Emission Enhancement in Deep-Ultraviolet AlGaN Microrods.
1Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
Nanomaterials (Basel, Switzerland)
|March 27, 2026
Summary
Optimizing deep-ultraviolet (DUV) emission from aluminum gallium nitride (AlGaN) microrods is crucial. This study found that 2 μm diameter AlGaN microrods exhibit significantly enhanced emission, making them ideal for DUV applications.
Area of Science:
- Materials Science
- Optoelectronics
- Semiconductor Physics
Background:
- High-aluminum-content AlGaN microrods are promising for deep-ultraviolet (DUV) emission.
- Fabrication methods influence their structural and optical properties.
Purpose of the Study:
- To investigate the effect of diameter on AlGaN microrod optical properties.
- To understand the role of crystallographic facets in DUV emission.
Main Methods:
- Fabrication of AlGaN microrods (2, 3, 4 μm diameters) using ICP dry etching and KOH wet modification.
- Characterization via SEM, CL spectroscopy, and CL mapping.
Main Results:
- KOH treatment created specific crystallographic facets (a-plane and m-plane).
- Band-edge emission intensity increased by 3.76x for 2 μm vs. 4 μm microrods.
- CL mapping revealed competition between radiative and non-radiative recombination.
Conclusions:
- 2 μm diameter is optimal for maximizing spontaneous emission in these AlGaN microrods.
- Facet engineering and surface states significantly impact DUV emission efficiency.
