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Measurements of Strain

Measurements of Strain

Strain quantifies the deformation of a material under force, typically measured as normal strain, which represents the change in length when compared with the original length. Electrical strain gauges are used for enhanced accuracy. These devices consist of a conductive wire mounted on a paper backing that adheres to the material's surface. These gauges operate on the piezoresistive effect, where the wire's electrical resistance changes in response to mechanical deformation. The strain gauge...

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On-Chip Strained Germanium Lasers: A Review.

Ronghuan Liu¹, Weiqi Song², Zi-Wei Zheng¹

¹Digital Industry Research Institute, Zhejiang Wanli University, Ningbo 315100, China.

Nanomaterials (Basel, Switzerland)

|March 27, 2026

Summary

This summary is machine-generated.

Strain engineering in germanium nanowires is key for developing on-chip lasers. This review explores how strain impacts germanium

Keywords:

germanium nanowire on-chip laser photonic-integrated circuits straintronics

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Area of Science:

Materials Science
Nanotechnology
Photonics

Background:

Photonic integrated circuits (PICs) are crucial for post-Moore era computing, but lack on-chip CMOS-compatible laser sources.
Germanium (Ge) straintronics enable bandgap transformation for efficient light emission, essential for integrated lasers.

Purpose of the Study:

To review the effects of strain on the fundamental physical properties of Ge nanowires.
To summarize strain engineering methods for Ge nanowires.
To discuss applications of strained Ge nanowires in on-chip lasers.

Main Methods:

Discussion of mechanical, electronic, optical, and thermal property changes in strained Ge nanowires.
Review of established and novel strain engineering techniques.
Analysis of reported application cases for strained Ge lasers.

Main Results:

Strain significantly alters Ge nanowire properties, enabling direct bandgap characteristics.
Various strain engineering methods influence bandgap transformation.
Strained Ge nanowires show promise for on-chip laser development.

Conclusions:

Understanding strain effects is critical for advancing Ge-based on-chip lasers.
This review provides a foundation for future research in strained Ge optoelectronics.
Effective strain engineering is vital for overcoming current limitations in photonic integrated circuits.