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Enhanced Rashba Effect and Optical Absorption in 2D Janus XMoYZ2 (X = S/Se/Te; Y = Si/Ge; Z = N/P): A

Xiaochuan Liu1, Meng Li1, Ningru Shang1

  • 1Zhengzhou Key Laboratory of Low-Dimensional Quantum Materials and Devices, School of Physics and Optoelectronic Engineering, Zhongyuan University of Technology, Zhengzhou 450007, China.

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Strain and electric fields significantly enhance the Rashba effect in 2D Janus materials (XMoYZ2), crucial for spintronics. Compressive strain and electric fields boost spin-momentum locking, paving the way for advanced spintronic devices.

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2D Janus XMoYZ2Rashba effectfirst-principlesoptical absorptionspintronics

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Area of Science:

  • Spintronics and Materials Science
  • Condensed Matter Physics

Background:

  • Spintronics offers solutions to semiconductor miniaturization challenges.
  • The Rashba effect, featuring spin-momentum locking, is key for spintronics.
  • Two-dimensional (2D) Janus transition metal dichalcogenides (TMDCs) possess inherent asymmetry favorable for the Rashba effect.

Purpose of the Study:

  • Investigate the Rashba effect in 2D Janus materials XMoYZ2.
  • Explore modulation of the Rashba effect using strain, electric fields, and charge doping.
  • Clarify mechanisms for enhancing Rashba constants in these materials.

Main Methods:

  • First-principles calculations were employed.
  • Systematic investigation of XMoYZ2 (X=S/Se/Te, Y=Si/Ge, Z=N/P) materials.
  • Analysis of strain, external electric field, and charge doping effects on the Rashba effect.

Main Results:

  • Compressive strain significantly increases Rashba constants in XMoYZ2, with TeMoSiP2 showing a ~2.2x enhancement under uniaxial strain.
  • Electric fields modulate the Rashba effect, with TeMoSiP2 exhibiting a ~2.7x enhancement.
  • TeMoYZ2 materials show strain-induced anisotropy beneficial for spin transport.
  • Charge doping had minimal impact on the spin-orbit coupling (SOC).

Conclusions:

  • Strain and electric fields are effective methods to enhance the Rashba effect in 2D Janus XMoYZ2 materials.
  • The findings provide a deeper understanding of Rashba constant modulation mechanisms.
  • This research contributes to the development of novel spintronic devices.