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Pisiform Homojunction with Energy Band Bending Induced via Co-Implantation Design Enabling Fast-Charging
Yanjun Gao1, Zujia Lu1, Qiyao Yu2
1State Key Laboratory of Explosion Science and Safety Protection, Beijing Institute of Technology, Beijing, 100081, People's Republic of China.
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A novel "induced-homojunction" concept proposed here is of great significance to alleviate the severe shuttling effects and poor rate-capability behavior, where the sandwiched p-n Mo2C homojunction/carbon composite is constructed by the co-implantation design of Fe and Mo-vacancy (v6Fe-Mo2C/C), enabling heterogeneous variation in n/p-type characteristics among adjacent crystal structure. Encouringly, the p-n homojunction formation with continuous band bending favors the rapid carrier transmission across the interface to endow reactive sites with high activity and strengthen polysulfides capture, hence promoting original S-S bonds cleavage, which is regarded as the critical step to suppress the shuttling-behavior and trigger conversion reactions occurrence. Crucially, high-speed ions/electrons transport effectively driven by the formed large-range internal-electric-field during the energy band alignment, ensures they timely reach the above-mentioned highly active sites and react fully, enabling the ultrafast conversion kinetics process. A conspicuous sulfur utilization (1508 mAh g-1 at 0.1 A g-1) and especially the superior rate performance (1337 mAh g-1 at 1 A g-1) are presented by the battery with v6Fe-Mo2C/C@S cathode. And the battery delivers a stable discharge capacity independently from the charging rate (even at 5 A g-1). This "induced-homojunction" concept achieves the significant reaction kinetics advantage to provide new insight for the exploitation of fast-charging Na-S batteries.
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