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High-Efficiency and Low-Defect Removal Mechanism of Silicon Carbide Using Center-Inlet Computer-Controlled Polishing.

Pengli Lei1, Baojian Ji1, Jing Hou1

  • 1Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900, China.

Micromachines
|March 28, 2026
PubMed
Summary
This summary is machine-generated.

This study introduces a novel center-inlet computer-controlled polishing (CCP) method for fabricating reaction-bonded silicon carbide (RB-SiC). This technique significantly enhances polishing efficiency and reduces surface defects in RB-SiC materials.

Keywords:
center-inlet polishinghigh efficiencylow defectsreaction bonded silicon carbide

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Area of Science:

  • Materials Science
  • Optical Engineering
  • Manufacturing Processes

Background:

  • Reaction-bonded silicon carbide (RB-SiC) is crucial for space optics due to its low density and high specific stiffness.
  • Traditional RB-SiC fabrication faces challenges with low polishing efficiency and pit defects.
  • These issues stem from RB-SiC's hardness and multi-component nature.

Purpose of the Study:

  • To develop a high-efficiency, low-defect fabrication method for RB-SiC.
  • To investigate the impact of center-inlet computer-controlled polishing (CCP) on RB-SiC.
  • To elucidate the mechanisms behind efficient material removal and defect suppression.

Main Methods:

  • Comparison of center-inlet and non-center-inlet liquid delivery in CCP.
  • Analysis of machining forces, heat generation, and defect characteristics.
  • Macro-micro coupled analysis to understand defect formation mechanisms.

Main Results:

  • Center-inlet CCP achieved higher polishing efficiency and lower defect density compared to non-center-inlet methods.
  • Defect density correlated positively with process parameters under non-center-inlet conditions.
  • Center-inlet conditions yielded a stable, higher friction coefficient, promoting efficient material removal.

Conclusions:

  • Center-inlet CCP effectively balances abrasion for high removal rates.
  • This method significantly suppresses processing heat, minimizing thermo-mechanical degradation and particle shedding.
  • The study demonstrates a viable approach for producing low-defect RB-SiC surfaces for demanding applications.