High-Efficiency and Low-Defect Removal Mechanism of Silicon Carbide Using Center-Inlet Computer-Controlled Polishing

Reaction-bonded silicon carbide (RB-SiC) is the preferred material for space optical systems because of its low density and high specific stiffness. However, its hardness and multi-component properties lead to low efficiency and pit defects during the polishing process, making the fabrication of RB-SiC a significant challenge. This study proposes a high-efficiency and low-defect fabrication method for RB-SiC using center-inlet computer-controlled polishing (CCP). We first investigated the polishing efficiency and surface quality achieved with center-inlet and non-center-inlet liquids. The results show that the defect density under non-center-inlet conditions was positively correlated with process parameters, while fewer defects and higher efficiency could be achieved under center-inlet conditions. Additionally, the efficient removal and defect suppression mechanisms under the center-inlet condition were revealed based on machining force, heat, and defect characterization. Under center-inlet conditions, the friction coefficient is larger and stable, resulting in high removal efficiency. The macro-micro coupled analysis results show that pit defects are generated through the combined action of force and heat, which leads to the thermo-mechanical degradation and shedding of SiC particles due to the temperature increase in the machining zone. The results demonstrate that center-inlet CCP not only ensures sufficient abrasion at the polishing interface to achieve high removal efficiency but also significantly suppresses the processing heat, thereby resulting in a low-defect surface.