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Broadly Tunable Self-Sustained Oscillations in CMOS-Compatible VO2/AlN/Si Devices.

Giwan Seo1,2, Sungwook Choi1, Bong Jun Kim3

  • 1School of Electrical Engineering, Pukyong National University, 45 Yongso-ro, Nam-gu, Busan 48513, Republic of Korea.

ACS Applied Materials & Interfaces
|March 28, 2026
PubMed
Summary
This summary is machine-generated.

Highly oriented vanadium dioxide (VO2) films on silicon substrates exhibit voltage-triggered self-sustained relaxation oscillations (SSRO). These VO2/AlN/Si heterostructures offer a reproducible, low-power platform for oscillatory devices and neuromorphic circuits.

Keywords:
AlN buffer layerVO2 thin filmheteroepitaxial multilayerinsulator−metal transitionself-sustained relaxation oscillationvoltage-controlled frequency

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Device Physics

Background:

  • Vanadium dioxide (VO2) exhibits a phase transition crucial for electronic devices.
  • Achieving high-quality VO2 films on silicon is challenging due to lattice mismatch and diffusion.

Purpose of the Study:

  • To demonstrate voltage-triggered self-sustained relaxation oscillations (SSRO) in VO2-based devices.
  • To investigate the role of aluminum nitride (AlN) buffer layers in VO2/Si heterostructures.
  • To explore the potential of these heterostructures for neuromorphic circuits.

Main Methods:

  • Epitaxial growth of VO2 films on AlN/Si substrates using techniques like TEM and XRD.
  • Fabrication and characterization of two-terminal devices.
  • Electrical measurements including I-V characteristics, resistance temperature dependence, and oscillation frequency modulation.
  • Statistical analysis of device performance.

Main Results:

  • High-quality VO2/AlN/Si heteroepitaxy with uniform morphology.
  • Sharp insulator-to-metal transitions in VO2 films with large resistance changes (>10^4).
  • Reproducible voltage-triggered SSRO with consistent switching voltages (~6.3 V).
  • AlN buffer layer enhances lattice matching, acts as a diffusion barrier, and induces strain, optimizing the transition temperature (~350 K).
  • Voltage-controlled frequency modulation of oscillations from ~296 to ~1076 kHz with a tuning sensitivity of ~260 kHz/V.

Conclusions:

  • VO2/AlN/Si heterostructures provide a stable, reproducible platform for oscillatory devices.
  • The AlN buffer layer is critical for enabling high-performance VO2 devices on silicon.
  • These devices are CMOS-compatible and suitable for low-power applications in neuromorphic computing and spiking networks.