μ_2T(n): a method for extracting the density dependent mobility in two-terminal nanodevices.

Area of Science:

• Semiconductor physics
• Materials science
• Nanotechnology

Background:

• The Hall effect is standard for measuring carrier mobility versus carrier density in bulk semiconductors.
• Standard Hall measurements are not applicable to nanostructures, limiting mobility analysis.
• Density-dependent mobility is crucial for understanding scattering mechanisms in nanomaterials.

Purpose of the Study:

• To develop a method for extracting density-dependent mobility in nanoscale field-effect transistors (FETs).
• To enable mobility measurements in nanostructures where conventional Hall geometry is not applicable.
• To provide a tool for analyzing scattering mechanisms in nanomaterials.

Main Methods:

• Introduced the μ2T(n) procedure for extracting density-dependent mobility from two-terminal conductance measurements.
• Utilized conventional conductance vs. gate voltage measurements at zero magnetic field.
• Validated the μ2T(n) method against standard Hall measurements in bulk semiconductors.

Main Results:

• Successfully extracted density-dependent mobility (μ2T(n)) in two-terminal nanoscale FETs.
• Applied the method to 256 individual two-terminal InAs nanowire FETs, revealing scattering mechanism information.
• Reanalyzed published data, demonstrating the method's utility beyond density-independent mobility assumptions.

Conclusions:

• The μ2T(n) procedure is a powerful tool for characterizing nanomaterials.
• This method overcomes limitations of Hall measurements in nanostructures.
• Enables optimization and development of advanced nanomaterials for various technologies.