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Updated: Mar 31, 2026

In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

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Temperature-Mediated Defect Engineering in Cu_2-xS for Tailoring Dielectric Response Properties.

Bo Sun¹, Zhao Yang¹, Jinyao Yin¹

¹School of Materials Science and Engineering, Zhejiang Sci-Tech University, Hangzhou, China.

|March 30, 2026

Summary

Defect engineering in copper sulfide (Cu_2-xS) enhances microwave absorption. Temperature-controlled synthesis reveals how defects like copper vacancies influence dielectric properties for optimal performance.

Keywords:

dielectric response electromagnetic loss mechanism impedance matching optimization single‐phase defect engineering temperature regulation

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Last Updated: Mar 31, 2026

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Area of Science:

Materials Science
Nanotechnology
Electromagnetism

Background:

Defect engineering is crucial for optimizing electromagnetic properties of materials for microwave absorption.
The precise relationship between intrinsic defect types, concentrations, and dielectric behavior in materials remains unclear.
Controlling defects is key to enhancing microwave absorption capabilities.

Purpose of the Study:

To synthesize single-phase copper sulfide (Cu_2-xS) with tunable defect states.
To investigate the influence of temperature-driven defect evolution on dielectric properties.
To establish a clear link between defect structure and microwave absorption performance.

Main Methods:

Facile solvothermal synthesis of Cu_2-xS.
Implementation of a temperature-driven defect evolution strategy.
Systematic analysis of intrinsic defect concentration (copper vacancies, dislocations) and dielectric properties.

Main Results:

Copper vacancy concentration varied with temperature, while dislocation density consistently increased.
Optimal defect synergy (high copper vacancies and dislocations) achieved at 170°C improved impedance matching and dielectric loss.
The optimized Cu_2-xS exhibited excellent microwave absorption: minimum reflection loss (RL_min) of -51.85 dB and effective absorption bandwidth (EAB) of 4.95 GHz.

Conclusions:

Temperature-driven defect engineering effectively controls defect states in Cu_2-xS.
A definitive relationship between defect structure and dielectric performance was established.
This strategy significantly enhances microwave absorption, showing potential for advanced electromagnetic wave management.