Statistical White-Line Analysis in High-Throughput TXM-XANES for Chemical State Quantification

Area of Science:

• Materials Science
• Nanotechnology
• Spectroscopy

Background:

• Transmission X-ray microscopy (TXM) coupled with X-ray absorption near-edge structure (XANES) offers 3D chemical state mapping at the nanoscale.
• TXM-XANES suffers from low signal-to-noise ratios and computationally intensive analysis due to small voxel sizes.

Purpose of the Study:

• To develop a statistical framework for direct chemical state extraction from TXM-XANES white-line peak positions.
• To overcome the limitations of conventional volume-averaged XANES (VA-XANES) analysis in TXM-XANES.

Main Methods:

• Developed a statistical white-line analysis framework applicable under specific structural and compositional conditions.
• Utilized low-order polynomial fitting for white-line feature analysis in voxel spectra.
• Validated the method on layered oxide cathode materials.

Main Results:

• Chemical state information was directly extracted from white-line peak positions without voxel-wise background subtraction or normalization.
• Extracted energy distributions showed strong correlation with conventional volume-averaged XANES (VA-XANES) results.
• The method demonstrated accuracy in reproducing white-line features.

Conclusions:

• The statistical approach enables high-throughput, dose-efficient, and noise-robust chemical state quantification in TXM-XANES.
• This method is broadly applicable to functional materials requiring nanoscale oxidation-state mapping.
• Simplifies TXM-XANES data analysis for chemical state determination.