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Electronic Trap-State Modulation in Sm-Doped SnO2 Nanofibers Enables Ultrasensitive Hydrogen Sensing
Asky Fungura1, Shan Hu2, Shuang Gu3
1Department of Chemical Engineering, Michigan Technological University, 1400 Townsend Drive, Houghton, Michigan 49931, United States.
Abstract:
The demand for sub-ppm hydrogen (H2) sensing is growing across emerging applications such as environmental monitoring, breath-based disease diagnostics, and early-stage battery failure detection. However, achieving reliable ppb-level detection with chemiresistive metal oxide sensors remains challenging. At trace gas concentrations, resistance modulation is often insufficient, particularly in the absence of noble metal catalysts. Here, we report samarium-doped tin dioxide (Sm-SnO2) nanofibers in which electronic trap-state modulation is exploited to enable ultrasensitive hydrogen sensing. The 2 at% Sm-doped SnO2 nanofibers exhibited markedly enhanced H2 sensitivity, achieving clear detection down to 25 ppb H2 at 200 °C, with a theoretical limit of detection of 4.5 ppb, placing this material among the most sensitive noble-metal-free SnO2-based H2 sensors reported to date. Mechanistic investigations through X-ray photoelectron spectroscopy and electron energy loss spectroscopy revealed that Sm3+ doping introduces deep trap states associated with charge-compensating defect complexes. These states reduce free carrier density, increase baseline resistance, and enable trap-assisted charge release during H2 exposure, thereby amplifying the sensing response. Trap-state engineering via rare-earth doping, exemplified by Sm-SnO2, provides an effective pathway for achieving ppb-level hydrogen detection in noble-metal-free chemiresistive sensors.
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