A megawatt ultra-wide bandgap semiconductor module for pulsed power electronics

Area of Science:

• Materials Science
• Electrical Engineering
• Semiconductor Physics

Background:

• Ultra-wide bandgap semiconductors offer superior electronic properties for high-voltage, high-power applications.
• Discrete ultra-wide bandgap devices have achieved kilowatt-level power switching.
• Packaged, multi-die modules are crucial for scaling power electronics for industrial and aerospace use.

Purpose of the Study:

• To develop a packaged, multi-die ultra-wide bandgap power module for enhanced power scaling.
• To demonstrate a gallium oxide power module capable of high pulsed power switching.
• To optimize device-package electrothermal performance for high electric fields and power surges.

Main Methods:

• Fabrication of a flip-chip packaged gallium oxide power module.
• Implementation of a high-permittivity interface for electrothermal co-optimization.
• Characterization of pulsed power switching capabilities, speed, and reverse recovery.

Main Results:

• Demonstrated a 1000 A, 1000 V pulsed power switching capability, exceeding prior ultra-wide bandgap devices by two orders of magnitude.
• Achieved over 1.8 MW/cm² pulsed power capacity density, surpassing silicon and wide-bandgap counterparts.
• Optimized module design maximized transient thermal performance and exploited gallium oxide's heat capacity and high-temperature stability.

Conclusions:

• The developed gallium oxide power module represents a significant advancement in ultra-wide bandgap electronics.
• The module's high power density and performance suggest its potential for next-generation high-power systems.
• Electrothermal co-optimization and material properties are key to unlocking the full potential of ultra-wide bandgap power modules.